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dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer

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dummy production Research Grade Silicon Carbide high purity 4h-semi un-doped transparent sic Wafer

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Brand Name : zmkj

Model Number : 4inch--semi high purity

Place of Origin : china

MOQ : 1pcs

Price : by required

Supply Ability : 100pcs/months

Delivery Time : 15days

Packaging Details : Packaged in a class 100 clean room environment, in cassettes of single wafer containers

material : sic crystal

industry : semiconductor wafer

application : semiconductor, Led, device, power electronics,5G

color : blue, green, white

type : 4H,6H, DOPED, no doped, high purity

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4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem​


About SiC Crystal

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a semiconductor containing silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.


Applications of SiC Crystal Substrates and Wafers

Silicon carbide (SiC) crytsals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength optoelectronic, high temperature, radiation resistant applciations. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates.


III-V Nitride Deposition

GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on SiC substrate or sapphire substrate.

Gallium Nitride Epitaxy on SiC Templates are used to fabricate blue light emitting diodes (blue LED) and and nearly solar blind UV photodetectors


Optoelectronic Devices

SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.

SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions.


High Power Devices

SiC has the following properties:

Wide Energy Bandgap

High electrical breakdown field

High saturation drift velocity

High thermal conductivity

SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transitors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability.

SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide bandgap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.

Currently silicon carbide (SiC) is widely used for high power MMICapplications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power MMIC devices


High Temperature Devices

Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to be operated at extremely high power levels and still dissipate the large amounts of excess heat generated from the devices.


High Frequency Power Devices

SiC-based microwave electronics are used for wireless communications and rad


2. substrates size

4 inch Diameter 4H-semi Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY

Production Grade

Research Grade

Dummy Grade

Diameter

100.0 mm+0.0/-0.5 mm

Surface Orientation

{0001} ±0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary Flat Orientation

90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up

Primary Flat Length

32.5 mm ±2.0 mm

Secondary Flat Length

18.0 mm ±2.0 mm

Wafer Edge

Chamfer

Micropipe Density

≤5 micropipes/ cm2

10 micropipes/ cm2

≤50 micropipes/ cm2

Polytype areas by high-intensity light

None permitted

10% area

Resistivity

1E7 Ω·cm

(area 75%)≥1E7 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

10μm

15 μm

Bow(absolute value)

25 μm

30 μm

Warp

45 μm

Surface Finish

Double Side Polish, Si Face CMP(chemical polishing)

Surface Roughness

CMP Si Face Ra≤0.5 nm

N/A

Cracks by high-intensity light

None permitted

Edge chips/indents by diffuse lighting

None permitted

Qty.2 <1.0 mm width and depth

Qty.2 <1.0 mm width and depth

Total usable area

≥90%

≥80%

N/A


Other size

3 inch Diameter 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY

Production Grade

Research Grade

Dummy Grade

Diameter

76.2 mm ±0.38 mm

Surface Orientation

{0001} ±0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary Flat Orientation

90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up

Primary Flat Length

22.0 mm ±2.0 mm

Secondary Flat Length

11.0 mm ±1.5mm

Wafer Edge

Chamfer

Micropipe Density

≤5 micropipes/ cm2

10 micropipes/ cm2

≤50 micropipes/ cm2

Polytype areas by high-intensity light

None permitted

10% area

Resistivity

1E7 Ω·cm

(area 75%)1E7 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

≤10 μm

≤15 μm

Bow(absolute value)

≤15 μm

≤25 μm

Warp

≤35 μm

Surface Finish

Double Side Polish, Si Face CMP(chemical polishing)

Surface Roughness

CMP Si Face Ra≤0.5 nm

N/A

Cracks by high-intensity light

None permitted

Edge chips/indents by diffuse lighting

None permitted

Qty.2 <1.0 mm width and depth

Qty.2 <1.0 mm width and depth

Total usable area

>90%

>80%

N/A

*The other specifications can be customized according to customers requirements


2 inch Diameter 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTY

Production Grade

Research Grade

Dummy Grade

Diameter

50.8 mm ±0.38 mm

Surface Orientation

{0001} ±0.2°

Primary Flat Orientation

<11-20> ± 5.0 ̊

Secondary Flat Orientation

90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up

Primary Flat Length

16.0 mm ±1.65 mm

Secondary Flat Length

8.0 mm ±1.65 mm

Wafer Edge

Chamfer

Micropipe Density

≤5 micropipes/ cm2

10 micropipes/ cm2

≤50 micropipes/ cm2

Polytype areas by high-intensity light

None permitted

10% area

Resistivity

1E7 Ω·cm

(area 75%)1E7 Ω·cm

Thickness

350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm

TTV

≤10 μm

≤15 μm

Bow(absolute value)

≤10 μm

≤15 μm

Warp

25 μm

Surface Finish

Double Side Polish, Si Face CMP(chemical polishing)

Surface Roughness

CMP Si Face Ra≤0.5 nm

N/A

Cracks by high-intensity light

None permitted

Edge chips/indents by diffuse lighting

page2image63440

None permitted

Qty.2 <1.0 mm width and depth

Qty.2 <1.0 mm width and depth

Total usable area

≥90%

≥80%

N/A

3.pictures



FAQ:

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) If you have your own express account, it's great.If not,we could help you ship them.

Freight is in accordance with the actual settlement or by FOB.

Q: How to pay?

A: 100%T/T, Paypal,


Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 2pcs in 10days

(2) For customized products, the MOQ is 10pcs up in10-20days.


Q: Can I customize the products based on my need?

A: Yes, we can customize the material, specifications and shape,thickness, size,surface.



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