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Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

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Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

Brand Name : zmsh

Model Number : transparent colorless

Certification : ISO9001

Place of Origin : china

MOQ : 10PCS

Price : by case

Payment Terms : T/T, T/T

Delivery Time : 30days within

Packaging Details : by customized case

industry : semiconductor substrate

materials : sic crystal

application : Seed wafers

Type : 4H-N, or High purity un-doped 4h-semi

color : white

hardeness : 9.4 up

grade : optical grade

size : can be customized

thermal conductivity : 4.9w/cm.k

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6inch production prime SIC crystal Silicon Carbide seed Wafer 0.6mm Thickness for sic growth

high purity undoped or transparent colorless sic optical lens wafer for Quantum light source

we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2 -6inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .

1.material application and advantagement

Applications:

• GaN epitaxy device
• Optoelectronic device
• High frequency device
• High power device
• High temperature device
• Light emitting diodes

• Low lattice mismatch
• High thermal conductivity
• Low power consumption
• Excellent transient characteristics
• High band gap

Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

SILICON CARBIDE MATERIAL PROPERTIES
Polytype
Single Crystal 4H
Single Crystal 6H
Lattice Parameters
a=3.076 Å
a=3.073 Å
c=10.053 Å
c=15.117 Å
Stacking Sequence
ABCB
ABCACB
Band-gap
3.26 eV
3.03 eV
Density
3.21 · 103 kg/m3
3.21 · 103 kg/m3
Therm. Expansion Coefficient
4-5×10-6/K
4-5×10-6/K
Refraction Index
no = 2.719
no = 2.707
ne = 2.777
ne = 2.755
Dielectric Constant
9.6
9.66
Thermal Conductivity
490 W/mK
490 W/mK
Break-Down Electrical Field
2 – 4 · 108 V/m
2 – 4 · 108 V/m
Saturation Drift Velocity
2.0 · 105 m/s
2.0 · 105 m/s
Electron Mobility
800 cm2/V·S
400 cm2/V·S
hole Mobility
115 cm2/V·S
90 cm2/V·S
Mohs Hardness
~9
2. Material Size describtion
Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2

FAQ:

Q: What's your MOQ and delivery time?

A: (1) For inventory, the MOQ is 3pcs. if 5-10pcs it's better in 10-30days

(2) For 6inch customized products, the MOQ is 10pcs up in 30-50days

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and Freight is in accordance with the actual settlement.

Q: How to pay?

A: T/T, 100%

Q: Do you have standard products?

A:there are not 6inch Our standard products in stock.

but as like substrates 4inch 0.33mm 2sp thickness have some in stock

Thanks~~~

Product Tags:

Undoped Sic Optical Lens Wafer

      

4H-N Optical Lens Wafer

      

Semiconductor Optical Lens Wafer

      
China Undoped transparent silicon carbide sic crystal Optical Lens with hardness 9.2 wholesale

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